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For the Inventor, By the Inventor

Hsinchu, Taiwan

Wen-Yi Hsieh

This inventor holds 49 USPTO granted patents and 1 published patent application, primarily in Semiconductor Devices. Top assignees: United Microelectronics Corp., Macronix International Co., Ltd., Novatek Microelectronics Corp.. Active years: 1999-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wen-Yi Hsieh. Retrieved from https://idiyas.com/inventor/wen-yi-hsieh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 49 

% Patents Active = 93.9

Average Co-Inventor Count = 3.0

ph-index = 10

Forward Citations = 682(Granted Patents)


Location History:

  • Hsien-Chu, TW (1999)
  • Taipei, TW (1999 - 2000)
  • Hsinchu, TW (2000 - 2008)
  • Yingsi Village, TW (2009)
  • Tainan County, TW (2010 - 2012)
  • Tainan, TW (2007 - 2022)

Company Filing History:

goldMedal36 out of 7,278 
 
United Microelectronics Corp.
 patents
silverMedal6 out of 3,609 
 
Macronix International Co., Ltd.
 patents
bronzeMedal4 out of 1,705 
 
Novatek Microelectronics Corp.
 patents
4. 2 out of 9,307 
 
Industrial Technology Research Institute
 patents
5. 1 out of 834,513 
Other
 patents

Years Active: 1999-2024

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Areas of Expertise:
Display Panel
Fingerprint Sensing
Touch Display
Memory Array
DRAM Capacitor
Charge Pump
Silicide Process
Leakage Current
Copper Damascene
Inter-Metal Dielectric
Reference Cell Trimming
Integrated Circuit
49 patents (USPTO):Explore Patents
1. 12141392 - Display panel, display device and driving method (2024-11-12),
2. 11450132 - Fingerprint driving circuit, fingerprint sensing device, electronic apparatus and operation method (2022-09-20),
3. 11182018 - Touch display driving device and driving method in the same (2021-11-23),
4. 10990219 - Integrated circuit and touch display apparatus to shorten a settle time of a common electrode of a touch display panel (2021-04-27),
5. 8174904 - Memory array and method of operating one of a plurality of memory cells (2012-05-08),
6. 8094493 - Memory devices and methods using improved reference cell trimming algorithms for accurate read operation window control (2012-01-10),
7. 7830723 - Nitride read-only memory cell and nitride read-only memory array (2010-11-09),
8. 7535771 - Devices and methods to improve erase uniformity and to screen for marginal cells for NROM memories (2009-05-19),
9. 7347228 - Method of making semiconductor devices (2008-03-25),
10. 7295471 - Memory device having a virtual ground array and methods using program algorithm to improve read margin loss (2007-11-13),
11. 7033899 - Method of making semiconductor devices (2006-04-25),
12. 6768366 - Charge pump system and clock generator (2004-07-27),
13. 6524973 - Method for forming low dielectric constant layer (2003-02-25),
14. 6479344 - Method of fabricating DRAM capacitor (2002-11-12),
15. 6403411 - Method for manufacturing lower electrode of DRAM capacitor (2002-06-11),

Title: The Innovative Journey of Wen-Yi Hsieh

Introduction: Wen-Yi Hsieh, a distinguished inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Hsieh's latest patents focus on advancements in semiconductor technology, particularly in the development of cutting-edge microchips with enhanced processing capabilities.

Career Highlights: With a career spanning over two decades, Hsieh has held key positions in leading tech companies, where he spearheaded research and development projects that have revolutionized the industry.

Collaborations: Throughout his career, Hsieh has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Wen-Yi Hsieh's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his reputation as a visionary inventor in the global tech community.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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