The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Dec. 08, 1998
Chih-Hsun Chu, Hsinchu, TW;
Horng-Nan Chern, Tainan Hsien, TW;
Kevin Lin, Taipei Hsien, TW;
Kuo-Tai Huang, Hsinchu, TW;
Wen-Yi Hsieh, Hsinchu, TW;
Tri-Rung Yew, Hsinchu Hsien, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for manufacturing the lower electrode of a DRAM capacitor. The method includes depositing polysilicon instead of amorphous silicon to form the lower electrode. Because polysilicon has a higher depositing temperature, it has a higher depositing rate capable of shortening depositing time. After forming the polysilicon lower electrode, the upper portion of the polysilicon layer is transformed into an amorphous layer by bombarding the polysilicon layer with ions to damage its internal structure. Eventually, hemispherical grain silicon is able to grow over the lower electrode, thereby increasing its surface area.