Horng-Nan Chern is a prominent inventor based in Tainan Hsien, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 15 patents. His work focuses on improving semiconductor devices and their operational methods.

Latest Patents

Chern's latest patents include a semiconductor device and its operating method. This invention features a P-type substrate, a P-type first well region, an N-type second well region, a gate, N-type source and drain regions, a dummy gate, and an N-type deep well region. The design aims to enhance the performance and efficiency of semiconductor devices. Another notable patent is a method of reducing stress between a nitride silicon spacer and a substrate. This method involves forming a dielectric layer on a semiconductor wafer, followed by an etching back process to optimize the structure and reduce stress.

Career Highlights

Horng-Nan Chern is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His innovative work has positioned him as a key figure in advancing semiconductor technology.

Collaborations

Chern has collaborated with notable coworkers, including Kun-Chi Lin and Kevin Lin. Their combined expertise has contributed to the successful development of various semiconductor technologies.

Conclusion

Horng-Nan Chern's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to impact the industry positively.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com