The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
Feb. 19, 2014
United Microelectronics Corp., Hsinchu, TW;
Ming-Shing Chen, Tainan, TW;
Ming-Hui Chang, Tainan, TW;
Wei-Ting Wu, Tainan, TW;
Ying-Chou Lai, Nantou County, TW;
Horng-Nan Chern, Tainan Hsien, TW;
Chorng-Lih Young, Taoyuan County, TW;
Chin-Sheng Yang, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
Provided is a semiconductor device including a P-type substrate, a P-type first well region, an N-type second well region, a gate, N-type source and drain regions, a dummy gate and an N-type deep well region. The first well region is in the substrate. The second well region is in the substrate proximate to the first well region. The gate is on the substrate and covers a portion of the first well region and a portion of the second well region. The source region is in the first well region at one side of the gate. The drain region is in the second well region at another side of the gate. The dummy gate is on the substrate between the gate and the drain region. The deep well region is in the substrate and surrounds the first and second well regions. An operation method of the semiconductor device is further provided.