The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2001
Filed:
Mar. 20, 2000
Horng-Nan Chern, Tainan Hsien, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating a wide-based boxed-structured capacitor containing hemi-spherical silicon grains. A substrate is provided with a source/drain and a first dielectric layer is formed on the substrate with a node contact opening. Then a doped polysilicon layer and a doped amorphous silicon layer are formed sequentially on the first dielectric layer. An etching step is performed to etch the doped amorphous silicon layer and the doped polysilicon layer and a wide-based lower electrode is formed by adjusting flow speeds of chlorine and of hydrogen bromide. Hemi-spherical silicon grains are formed on the surface of the doped amorphous silicon layer in the lower electrode. A second dielectric layer and an upper electrode are formed sequentially on the lower electrode and the capacitor is completed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile