The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2000

Filed:

Apr. 30, 1999
Applicant:
Inventors:

Tzung-Han Lee, Taipei, TW;

Kun-Chi Lin, Hsinchu, TW;

Horng-Nan Chern, Tainan Hsien, TW;

Alex Hou, Kaohsiung, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438401 ; 438462 ;
Abstract

A method of manufacturing an alignment mark. A substrate having a device region and an alignment mark region is provided. The device region is higher than the alignment mark region. The device region comprises an active region. An isolation structure is formed in the substrate at the edge of the alignment mark region and a first dielectric layer is formed over a portion of the substrate at the alignment mark region, simultaneously. A conductive layer is formed over the substrate. A portion of the conductive layer is removed to expose the first dielectric layer at the alignment mark region. The remaining conductive layer is patterned to form a component at the active region. A second dielectric layer with a smooth surface is formed over the substrate to cover the component. A wire is formed on the second dielectric layer, wherein a distance between the wire and the alignment mark region is larger than a distance between the component and the alignment mark region.


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