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Kun-Chi Lin

This inventor holds 36 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignee: United Microelectronics Corp.. Active years: 1999-2003.

USPTO Granted Patents = 36

% Patents Active = 88.9

Average Co-Inventor Count = 2.2

ph-index = 6

Forward Citations = 139(Granted Patents)

Location History:

Hsinchui, TW (2001)
Hisn-Chu, TW (2001)
Hsinchu, TW (1999 - 2003)

Company Filing History:

36 out of 7,260

United Microelectronics Corp.

patents

Years Active: 1999-2003

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Areas of Expertise:

Node Contacts

DRAM Capacitors

Multi-Die Package

Cylindrical Capacitor

Dynamic Random Access Memory

Semiconductor Dielectric Layer

Contact Hole Formation

Electrode Manufacturing

Hemispherical Silicon Grain

MOS Transistor

Alignment Mark

Photoresist Process

36 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6667234 - Method of fabricating node contacts (2003-12-23),

2. 6570246 - Multi-die package (2003-05-27),

3. 6479355 - Method for forming landing pad (2002-11-12),

4. 6465360 - Method for fabricating an ultra small opening (2002-10-15),

5. 6432772 - Method of forming a lower storage node of a capacitor (2002-08-13),

6. 6429135 - Method of reducing stress between a nitride silicon spacer and a substrate (2002-08-06),

7. 6417065 - Method of fabricating a bottom electrode (2002-07-09),

8. 6413832 - Method for forming inner-cylindrical capacitor without top electrode mask (2002-07-02),

9. 6365955 - Cylindrical capacitor structure and method of manufacture (2002-04-02),

10. 6365454 - Cylindrical capacitor structure and method of manufacture (2002-04-02),

11. 6329244 - Method of manufacturing dynamic random access memory cell (2001-12-11),

12. 6316341 - Method for cell pass transistor design in DRAM process (2001-11-13),

13. 6297139 - Method of forming a contact hole in a semiconductor wafer (2001-10-02),

14. 6255229 - Method for forming semiconductor dielectric layer (2001-07-03),

15. 6238974 - Method of forming DRAM capacitors with a native oxide etch-stop (2001-05-29),

Title: Inventor Kun-Chi Lin: Revolutionizing Technology in Hsinchu

Introduction: Kun-Chi Lin is a pioneering inventor based in Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Kun-Chi Lin holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his diverse expertise and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Kun-Chi Lin has worked with leading tech companies and research institutions in Taiwan, playing a key role in developing cutting-edge solutions that have shaped the industry.

Collaborations: Throughout his career, Kun-Chi Lin has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and knowledge exchange that has led to significant advancements in various technological domains.

Conclusion: Kun-Chi Lin's relentless pursuit of innovation and his passion for pushing the boundaries of technology continue to inspire the next generation of inventors and pave the way for a more connected and technologically advanced future.

Profile summary based on public USPTO records.

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