The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2000
Filed:
Mar. 31, 1998
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A fabricating method and a structure of a stacked-type capacitor is provided comprising forming a first dielectric layer having a first via on a semiconductor substrate. A first conductive layer is filled into the first via. Then, insulating layers and dielectric layers are formed. A photolithography step is used to form a second dendriform via in the insulating layers and the dielectric layers. A second conductive layer is filled in the second dendriform via. The insulating layers and conductive layers are removed to form a dendriform lower electrode. The dendriform electrode provides a larger surface area to increase capacitance. Further, a polysilicon layer of hemispherical grains is formed to increase the surface area of the lower electrode.