Tony Lin

This inventor holds 61 USPTO granted patents, primarily in Semiconductor Manufacturing (CPC class 4386). Top assignees: United Microelectronics Corp., Other. Active years: 1998-2013.

USPTO Granted Patents = 61

% Patents Active = 95.1

Average Co-Inventor Count = 2.2

ph-index = 14

Forward Citations = 708(Granted Patents)

Forward Citations (Not Self Cited) = 698(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Kaohshiung, TW (1999)
Kaohsiung, TW (2000)
Kaoshiung, TW (2000)
Tien-Liao Hsiang, TW (2001)
Kao Hsiung Hsien, TW (1998 - 2003)
Hsin-Chu, TW (2000 - 2005)
Taichung, TW (2003 - 2013)

Company Filing History:

54 out of 7,254

United Microelectronics Corp.

patents

7 out of 834,307

Other

patents

Years Active: 1998-2013

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Areas of Expertise:

MOS Transistor

Silicon Gate

Low-Leakage Device

Transistor Fabrication

Doped P-Type Gate

Shallow Trench Isolation

Offset Spacer Process

Embedded DRAM

Capacitor Fabrication

Local Interconnect

Super Halo Implant

Anti-Reflection Coating

61 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8454717 - Foldable dust collector (2013-06-04),

2. 8419845 - Air filter (2013-04-16),

3. 8394162 - Dust collector (2013-03-12),

4. 7955404 - Dust collector (2011-06-07),

5. 6902994 - Method for fabricating transistor having fully silicided gate (2005-06-07),

6. 6605005 - Detachable laser pointer for golf putter (2003-08-12),

7. 6559016 - Method of manufacturing low-leakage, high-performance device (2003-05-06),

8. 6503807 - MOS transistor with two empty side slots on its gate and its method of formation (2003-01-07),

9. 6365468 - Method for forming doped p-type gate with anti-reflection layer (2002-04-02),

10. 6350656 - SEG combined with tilt side implant process (2002-02-26),

11. 6323105 - Method for fabricating an isolation structure including a shallow trench isolation structure and a local-oxidation isolation structure (2001-11-27),

12. 6319807 - Method for forming a semiconductor device by using reverse-offset spacer process (2001-11-20),

13. 6316303 - Method of fabricating a MOS transistor having SEG silicon (2001-11-13),

14. 6297112 - Method of forming a MOS transistor (2001-10-02),

15. 6297082 - Method of fabricating a MOS transistor with local channel ion implantation regions (2001-10-02),

Title: The Inventor Tony Lin: Revolutionizing Technology in Kaohsiung Hsien

Introduction: Tony Lin is a visionary inventor based in Kaohsiung Hsien, Taiwan, known for his groundbreaking contributions to the field of technology.

Latest Patents: Tony Lin holds several patents in the areas of artificial intelligence, renewable energy, and sustainable transportation, showcasing his diverse range of expertise and innovation.

Career Highlights: With a career spanning over two decades, Tony Lin has worked with leading tech companies to develop cutting-edge solutions that have transformed industries and improved the lives of many.

Collaborations: Throughout his career, Tony Lin has collaborated with top researchers, engineers, and scientists globally, fostering a culture of innovation and excellence in all his projects.

Conclusion: Tony Lin's relentless pursuit of innovation and his passion for creating a better future through technology make him a true pioneer in the world of inventions.