The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2003
Filed:
Dec. 05, 2000
Hua-Chou Tseng, Hsinchu, TW;
Tony Lin, Kaohsiung Hsien, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of manufacturing a low-leakage, high-performance device. A substrate having a gate electrode thereon is provided. A lightly doped, high-energy implantation is conducted to form a lightly doped source/drain terminal in the substrate. An offset spacer is formed on each sidewall of the gate electrode. A heavily doped implantation is conducted to form a heavily doped source/drain terminal in the substrate. The heavily doped source/drain terminal has a depth smaller than the lightly doped source/drain terminal. A protective spacer structure is formed on each sidewall of the gate electrode. A deep-penetration source/drain implantation is carried out to form a deep source/drain terminal in the substrate.