The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
Aug. 15, 2003
Applicants:
Yoyi Gong, Hsinchu, TW;
Tony Lin, Hsinchu, TW;
Jung-tsung Tseng, Sijhih, TW;
Abula Yu, Sinjhuang, TW;
Inventors:
Yoyi Gong, Hsinchu, TW;
Tony Lin, Hsinchu, TW;
Jung-Tsung Tseng, Sijhih, TW;
Abula Yu, Sinjhuang, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/3205 ; H01L021/28 ;
U.S. Cl.
CPC ...
Abstract
A method for fabricating a transistor having a fully silicided gate is described. A silicon substrate with a semi-finished transistor formed thereon is provided, wherein the transistor comprises a gate dielectric film, a silicon gate, a cap layer on the silicon gate, a spacer and a source/drain region. A raised source/drain is formed on the source/drain region, and then the cap layer is removed. Subsequently, a full silicidation process is performed to fully silicide the silicon gate.