The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Nov. 10, 2005
Wen-yi Hsieh, Tainan, TW;
Ken-hui Chen, Taichung, TW;
Chun-hsiung Hung, Tainan, TW;
Han-sung Chen, Giron, TW;
Nai-ping Kuo, Tainan, TW;
Ching-chung Lin, Taipei, TW;
Chuan-ying Yu, Taipei, TW;
Wen-Yi Hsieh, Tainan, TW;
Ken-Hui Chen, Taichung, TW;
Chun-Hsiung Hung, Tainan, TW;
Han-Sung Chen, Giron, TW;
Nai-Ping Kuo, Tainan, TW;
Ching-Chung Lin, Taipei, TW;
Chuan-Ying Yu, Taipei, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A memory device is disclosed that includes a plurality of word lines and a plurality of memory cells operating in one of a plurality of modes and coupled to at least one of the word lines. The memory device also includes a plurality of reference lines and reference cells. Each reference cell corresponds to one of the operating modes, supplies a reference current for the corresponding mode, and is coupled to at least one of the reference lines. A reference cell current from a reference cell can also be compared to a target range and, if outside the target range, the voltage level on a corresponding reference line can be adjusted accordingly such that the reference current falls within the target range (i.e., reference current trimming).