The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Dec. 22, 2004
Cha-hsin Lin, Hsinchu, TW;
Zing-way Pei, Hsinchu, TW;
Shing-chii LU, Hsinchu, TW;
Wen-yi Hsieh, Hsinchu, TW;
Cha-Hsin Lin, Hsinchu, TW;
Zing-Way Pei, Hsinchu, TW;
Shing-Chii Lu, Hsinchu, TW;
Wen-Yi Hsieh, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method for fabricating semiconductor device is provided. A high stress layer formed on, under or on both sides of the transistors of the semiconductor device is employed as a cap layer. A specific region is then defined through photo resistor mask, and the stress of the region is changed by ion implanting. Therefore, compressive stress and tensile stress occur on the high stress layer. According the disclosed method, the high stress layer may simultaneously improve the characteristics of the transistors formed on the same wafer. Further, the mobility of the carriers of the device is enhanced.