The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2003
Filed:
Mar. 13, 2001
Applicant:
Inventor:
Wen-Yi Hsieh, Hsin-chu, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/1469 ;
Abstract
The present invention provides a method for forming low dielectric constant layer in a semiconductor device comprising providing the semiconductor device. A dielectric layer is formed on the semiconductor device, which has a constituent of a plurality of unsaturated carbon bonds compounds. The dielectric layer is then treated with hydrogen. The purpose of treatment of hydrogen is to form saturated carbon bonds compounds for unexhausted unsaturated carbon bonds in the dielectric layer.