The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7535771 B1

PDF
Full Text
Expired
Date of Patent:
May. 19, 2009

Filed:

Apr. 01, 2005
Applicants:

Wen-yi Hsieh, Yingsi Village, TW;

Ching-chung Lin, Banciao, TW;

Ken-hui Chen, Dali, TW;

Chun-hsiung Hung, Hsinchu, TW;

Inventors:

Wen-Yi Hsieh, Yingsi Village, TW;

Ching-Chung Lin, Banciao, TW;

Ken-Hui Chen, Dali, TW;

Chun-Hsiung Hung, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A NROM memory device includes an array of memory cells and first and second bit lines. The first and second bit lines are coupled to opposite sides of the memory cells. During an erase operation, one of the sides of the memory cells receives a positive voltage and the other side couples to a common node or a limited current source. Methods are also disclosed that can easily screen for marginal memory cells based on a threshold voltage distribution of the memory cells.


Find Patent Forward Citations

Hsieh, Wen-Yi. (2009). Devices and methods to improve erase uniformity and to screen for marginal cells for nrom memories (U.S. Patent No. 7535771). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7535771

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