The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2000
Filed:
Jul. 31, 1998
Nai-Chen Peng, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of manufacturing a dual cylinder-shaped capacitor. The method includes the steps of forming a cylindrical oxide layer above a conductive layer, and then forming silicon nitride spacers and first oxide spacers on the sidewalls of the cylindrical oxide layer. Next, using the silicon nitride spacers, the first oxide spacers and the cylindrical oxide layer as a hard mask, the conductive layer is etched to form a separate lower electrode. Thereafter, the oxide layer is removed so that only the silicon nitride spacers remain. Subsequently, second oxide spacers and third oxide spacers are formed on the sidewalls of the silicon nitride spacers. Finally, the silicon nitride spacers are removed, and then the conductive layer is again etched to form the dual cylinder-shaped lower electrode.