The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 1997
Filed:
Jul. 15, 1996
Applicant:
Inventors:
Chen-Chiu Hsue, Hsin-Chu, TW;
Sun-Chieh Chien, Hsin-Chu, TW;
Chung-Yuan Lee, Chung-Li, TW;
Ming-Tzong Yang, Hsin Chu, TW;
Assignee:
United Microelectronics Corporation, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 29 ; 437 34 ; 437 57 ;
Abstract
A method of manufacture of a semiconductor device comprises forming a silicon dioxide film upon the surface of said device, forming patterns of silicon nitride upon the surface of said silicon dioxide film, ion implanting ions into said substrate adjacent to at least some of said silicon nitride patterns for well regions of a first polarity, forming a mask over said device, and deeply ion implanting with ions of opposite polarity into well regions of opposite polarity.