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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5698458 B1

PDFFull Text
Date of Patent:
Dec. 16, 1997

Filed:

Jul. 15, 1996

Multiple well device and process of manufacture

Applicant:
Inventors:

Chen-Chiu Hsue, Hsin-Chu, TW;

Sun-Chieh Chien, Hsin-Chu, TW;

Chung-Yuan Lee, Chung-Li, TW;

Ming-Tzong Yang, Hsin Chu, TW;

Assignee:

United Microelectronics Corporation, Hsin-Chu, TW;

Attorney:

Wright; William H.

Primary Examiner:

John Niebling

Assistant Examiner:

S Mulpuri

Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 29 ; 437 34 ; 437 57 ;
Abstract

A method of manufacture of a semiconductor device comprises forming a silicon dioxide film upon the surface of said device, forming patterns of silicon nitride upon the surface of said silicon dioxide film, ion implanting ions into said substrate adjacent to at least some of said silicon nitride patterns for well regions of a first polarity, forming a mask over said device, and deeply ion implanting with ions of opposite polarity into well regions of opposite polarity.

Find Patent Forward Citations

Hsue, Chen-Chiu. (1997). Multiple well device and process of manufacture (U.S. Patent No. 5698458). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5698458

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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