The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2001

Filed:

Sep. 15, 1997
Applicant:
Inventor:

Ming-Tzong Yang, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ; H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/14763 ; H01L 2/144 ;
Abstract

A layer of metal is deposited on the surface of a layer of dielectric material and layer of protective material such as a thin layer of silicon oxide is provided on the layer of metal. An etch mask, which might be photoresist, is provided on the layer of protective material. The protective layer is etched through and the metal layer is etched using the photoresist etch mask. Little or no overetching is performed at this time, so it is likely that stringers from the metal layer will be left between the patterned wiring lines. Sidewall structures are then formed alongside the metal lines to protect the sidewalls of the wiring lines from undercutting and corrosion in subsequent etching steps. Overetching is then performed to remove any metal stringers, with the protective layer and the sidewall structures acting as masks for the overetching process, protecting the wiring lines from thinning during this etch process.


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