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For the Inventor, By the Inventor

Lake St. Louis, MO, United States of America

Michael R Seacrist

LinkedIn
USPTO Granted Patents = 20 

 

Average Co-Inventor Count = 2.3

ph-index = 4

Forward Citations = 56(Granted Patents)


Location History:

  • Lake Saint Louis, MO (US) (2009 - 2015)
  • Lake St. Louis, MO (US) (2014 - 2024)

Company Filing History:

goldMedal12 out of 309 
 
Globalwafers Co., Ltd.
 patents
silverMedal5 out of 38 
 
Sunedison Semiconductor Limited (uen201334164h)
 patents
bronzeMedal3 out of 388 
 
Kansas State University Research Foundation
 patents
4. 2 out of 2,343 
 
University of Illinois
 patents
5. 2 out of 347 
 
Memc Electronic Materials, Inc.
 patents
6. 1 out of 1 
 
Sunedision Semiconductor Limited (uen201334164h)
 patent
7. 1 out of 1 
 
Ksu Research Foundation
 patent
where one patent can have more than one assignee

Years Active: 2009-2024

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20 patents (USPTO):Explore Patents
1. 11942360 - Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability (2024-03-26),
2. 11887885 - Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability (2024-01-30),
3. 11626318 - Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability (2023-04-11),
4. 11532501 - Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability (2022-12-20),
5. 11289577 - Direct formation of hexagonal boron nitride on silicon based dielectrics (2022-03-29),
6. 11276759 - Direct formation of hexagonal boron nitride on silicon based dielectrics (2022-03-15),
7. 11075109 - Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability (2021-07-27),
8. 10943813 - Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability (2021-03-09),
9. 10796905 - Manufacture of group IIIA-nitride layers on semiconductor on insulator structures (2020-10-06),
10. 10658472 - Direct formation of hexagonal boron nitride on silicon based dielectrics (2020-05-19),
11. 10573517 - Epitaxial growth of defect-free, wafer-scale single-layer graphene on thin films of cobalt (2020-02-25),
12. 10262855 - Manufacture of Group IIIA-nitride layers on semiconductor on insulator structures (2019-04-16),
13. 9355842 - Direct and sequential formation of monolayers of boron nitride and graphene on substrates (2016-05-31),
14. 9343533 - Direct formation of graphene on semiconductor substrates (2016-05-17),
15. 9029854 - Bulk silicon wafer product useful in the manufacture of three dimensional multigate MOSFETs (2015-05-12),

Title: Inventor Michael R Seacrist - Pioneering Innovations in Lake St. Louis

Introduction: Michael R Seacrist is a distinguished inventor based in Lake St. Louis, Missouri, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Michael R Seacrist holds several patents in various technological domains, including advancements in renewable energy systems, smart home devices, and medical equipment.

Career Highlights: With a career spanning over two decades, Michael R Seacrist has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing innovative solutions to address them.

Collaborations: Throughout his career, Michael R Seacrist has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life and make a lasting impact on the industry.

Conclusion: Michael R Seacrist's relentless passion for innovation and his commitment to pushing the boundaries of technology continue to inspire the next generation of inventors and shape the future of technological advancements.

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