The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2020
Filed:
Sep. 28, 2016
Applicants:
Sunedison Semiconductor Limited (Uen201334164h), Singapore, SG;
The Board of Trustees of the University of Illinois, Urbana, IL (US);
Inventors:
Vikas Berry, Chicago, IL (US);
Sanjay Behura, Chicago, IL (US);
Phong Nguyen, Witchita, KS (US);
Michael R. Seacrist, Lake St. Louis, MO (US);
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 32/184 (2017.01); C30B 25/18 (2006.01); C30B 29/02 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02527 (2013.01); C01B 32/184 (2017.08); C30B 25/18 (2013.01); C30B 25/183 (2013.01); C30B 29/02 (2013.01); H01L 21/0242 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02389 (2013.01); H01L 21/02392 (2013.01); H01L 21/02395 (2013.01); H01L 21/02488 (2013.01); H01L 21/02491 (2013.01); H01L 21/02502 (2013.01); H01L 21/02658 (2013.01); H01L 29/1606 (2013.01);
Abstract
A method for depositing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate is provided. Due to the strong adhesion of graphene and cobalt to a semiconductor substrate, the layer of graphene is epitaxially deposited.