Wichita, KS, United States of America

Phong Nguyen

This inventor holds 4 USPTO granted patents and 1 published patent application and 3 EPO patents. Top assignees: Globalwafers Co., Ltd., University of Illinois. Active years: 2020-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Phong Nguyen. Retrieved from https://idiyas.com/inventor/phong-nguyen-io84ssq9

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 4 

% Patents Active = 100.0

 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2020-2022

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4 patents (USPTO):Explore Patents

Title: Phong Nguyen: Innovator in Hexagonal Boron Nitride and Graphene Technologies

Introduction

Phong Nguyen is a prominent inventor based in Wichita, Kansas, known for his significant contributions to the field of materials science. He holds four patents, showcasing his innovative approach to the fabrication of advanced materials. His work primarily focuses on the development of hexagonal boron nitride and graphene heterostructures, which have important applications in electronics and nanotechnology.

Latest Patents

One of Phong Nguyen's latest patents is titled "Direct formation of hexagonal boron nitride on silicon based dielectrics." This patent describes a scalable process for fabricating graphene/hexagonal boron nitride (h-BN) heterostructures. The process involves (BN)H-radical interfacing with active sites on silicon nitride coated silicon (SiN/Si) surfaces for the nucleation and growth of large-area, uniform, and ultrathin h-BN directly on SiN/Si substrates. The B/N atomic ratio is maintained at 1:1.11±0.09. Furthermore, the monolayer graphene that is van der Waals bonded with the produced h-BN surface benefits from a reduced roughness of 3.4 times compared to SiN/Si. This reduction in surface roughness leads to decreased surface roughness scattering and charge impurity scattering, resulting in an enhanced intrinsic charge carrier mobility that is threefold for graphene on h-BN/SiN/Si.

Career Highlights

Phong Nguyen has worked with notable organizations, including GlobalWafers Co., Ltd. and the University of Illinois. His experience in these institutions has allowed him to collaborate with leading experts in the field and contribute to groundbreaking research in materials science.

Collaborations

Some of Phong Nguyen's coworkers include Vikas Berry and Sanjay Behura. Their collaborative efforts have further advanced the research and development of innovative materials.

Conclusion

Phong Nguyen's work in the field of hexagonal boron nitride and graphene technologies exemplifies his commitment to innovation and excellence. His patents and collaborations highlight his significant impact on materials science and its applications in modern technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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