The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Apr. 28, 2017
Globalwafers Co., Ltd., Hsinchu, TW;
Board of Trustees of the University of Illinois, Chicago, IL (US);
Vikas Berry, Chicago, IL (US);
Sanjay Behura, Chicago, IL (US);
Phong Nguyen, Witchita, KS (US);
Michael R. Seacrist, Lake St. Louis, MO (US);
GlobalWafers Co., Ltd., Hsinchu, TW;
Abstract
A scalable process for fabricating graphene/hexagonal boron nitride (h-BN) heterostructures is disclosed herein. The process includes (BN)H-radical interfacing with active sites on silicon nitride coated silicon (SiN/Si) surfaces for nucleation and growth of large-area, uniform and ultrathin h-BN directly on SiN/Si substrates (B/N atomic ratio=1:1.11±0.09). Further, monolayer graphene van der Waals bonded with the produced h-BN surface benefits from h-BN's reduced roughness (3.4 times) in comparison to SiN/Si. Because the reduced surface roughness leads to reduction in surface roughness scattering and charge impurity scattering, therefore an enhanced intrinsic charge carrier mobility (3 folds) for graphene on h-BN/SiN/Si is found.