Vikas Berry

Title: Inventor Vikas Berry: Pioneering Innovations in Semiconductor Materials

Introduction

Vikas Berry, an accomplished inventor based in Manhattan, Kansas, has made significant contributions to the field of semiconductor materials, holding a total of 10 patents. His innovative approaches have played a crucial role in enhancing the performance and manufacturability of advanced materials, particularly graphene and hexagonal boron nitride (h-BN) heterostructures.

Latest Patents

One of Berry's latest patents details the direct formation of hexagonal boron nitride on silicon-based dielectrics. This scalable process for fabricating graphene/h-BN heterostructures involves (BN)H-radical interfacing with active sites on silicon nitride coated silicon (SiN/Si) surfaces. The process facilitates the nucleation and growth of large-area, uniform, and ultrathin h-BN directly on SiN/Si substrates, achieving a B/N atomic ratio of 1:1.11±0.09. Furthermore, the monolayer graphene that is van der Waals bonded with the produced h-BN surface benefits from a reduction in surface roughness by 3.4 times compared to SiN/Si. This significant decrease in surface roughness leads to reduced scattering and an impressive threefold enhancement in intrinsic charge carrier mobility for graphene on h-BN/SiN/Si.

Career Highlights

Throughout his career, Vikas Berry has been associated with various esteemed organizations, including Globalwafers Co., Ltd. and the Kansas State University Research Foundation. His work has not only advanced existing technologies but has also contributed to the development of new applications that align with the evolving needs of the semiconductor industry.

Collaborations

Berry has collaborated with notable professionals such as Michael R. Seacrist and Sanjay Behura. These collaborations have allowed him to leverage collective expertise, contributing to his successful patent portfolio and the advancement of innovative semiconductor technologies.

Conclusion

Vikas Berry stands out as a prominent inventor whose work in semiconductor materials continues to influence the industry. His innovative methods for producing high-quality h-BN and graphene heterostructures demonstrate his commitment to advancing technology and enhancing material performance, paving the way for future innovations in the field.