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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9029228 B1

PDFFull Text
Date of Patent:
May. 12, 2015

Filed:

May. 09, 2013

Direct and sequential formation of monolayers of boron nitride and graphene on substrates

Applicants:

Memc Electronic Materials, Inc., St. Peters, MO (US);

Kansas State University Research Foundation, Manhattan, KS (US);

Inventors:

Michael R. Seacrist, Lake St. Louis, MO (US);

Vikas Berry, Manhattan, KS (US);

Phong Tuan Nguyen, Wichita, KS (US);

Assignees:

SunEdision Semiconductor Limited (UEN201334164H), Singapore, SG;

Kansas State University Research Foundation, Manhattan, KS (US);

Attorney:

Armstrong Teasedale LLP

Primary Examiner:

David Nhu

Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 21/8222 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01); B82Y 40/00 (2011.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
H01L 21/02376 (2013.01); H01L 29/1606 (2013.01); B82Y 40/00 (2013.01); H01L 21/0237 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02491 (2013.01); H01L 21/02502 (2013.01); H01L 21/02527 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); B82Y 30/00 (2013.01);
Abstract

The invention generally related to a method for preparing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate. The layer of graphene may be formed in direct contact with the surface of the substrate, or an intervening layer of a material may be formed between the substrate surface and the graphene layer.

Find Patent Forward Citations

Seacrist, Michael. (2015). Direct and sequential formation of monolayers of boron nitride and graphene on substrates (U.S. Patent No. 9029228). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9029228

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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