Globalwafers Co., Ltd.

Kansas State University Research Foundation

Sunedison Semiconductor Limited (uen201334164h)

University of Illinois

Other

University of Nebraska

Sunedision Semiconductor Limited (uen201334164h)

Ksu Research Foundation

Vikas Berry

Michael R Seacrist

Sanjay Behura

Phong Nguyen

Phong Tuan Nguyen

Nihar Mohanty

David S Moore

Ravi Saraf

Sanjun Niu

Vivek Maheshwari

Phong T Nguyen

A scalable process for fabricating graphene/hexagonal boron nitride (h-BN) heterostructures is disclosed herein. The process includes (BN)H-radical interfacing with active sites on silicon nitride coated silicon (SiN/Si) surfaces for nucleation and growth of large-area, uniform and ultrathin h-BN directly on SiN/Si substrates (B/N atomic ratio=1:1.11&#xb1;0.09). Further, monolayer graphene van der Waals bonded with the produced h-BN surface benefits from h-BN's reduced roughness (3.4 times) in comparison to SiN/Si. Because the reduced surface roughness leads to reduction in surface roughness scattering and charge impurity scattering, therefore an enhanced intrinsic charge carrier mobility (3 folds) for graphene on h-BN/SiN/Si is found.

Direct formation of hexagonal boron nitride on silicon based dielectrics

A method for depositing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate is provided. Due to the strong adhesion of graphene and cobalt to a semiconductor substrate, the layer of graphene is epitaxially deposited.

Epitaxial growth of defect-free, wafer-scale single-layer graphene on thin films of cobalt

The invention generally related to a method for preparing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate. The layer of graphene may be formed in direct contact with the surface of the substrate, or an intervening layer of a material may be formed between the substrate surface and the graphene layer.

Direct and sequential formation of monolayers of boron nitride and graphene on substrates

The invention generally related to a method for preparing a layer of graphene directly on the surface of a semiconductor substrate. The method includes forming a carbon-containing layer on a front surface of a semiconductor substrate and depositing a metal film on the carbon layer. A thermal cycle degrades the carbon-containing layer, which forms graphene directly upon the semiconductor substrate upon cooling. In some embodiments, the carbon source is a carbon-containing gas, and the thermal cycle causes diffusion of carbon atoms into the metal film, which, upon cooling, segregate and precipitate into a layer of graphene directly on the semiconductor substrate.

Direct formation of graphene on semiconductor substrates

Graphene particulates, especially graphene nanoribbons (GNRs) and graphene quantum dots (GQDs), and a high-throughput process for the production of such particulates is provided. The graphene particulates are produced by a nanotomy process in which graphene blocks are cut from a source of graphite and then exfoliated into a plurality of graphene particulates. Graphene particulates having narrow widths, on the order of 100 nm or less, can be produced having band gap properties suitable for use in a variety of electrical applications.

Production of graphene nanoribbons with controlled dimensions and crystallographic orientation

The present invention provides a single-electron device composed of a necklace of about 5000 nanoparticles. The linear necklace is self-assembled by interfacial phenomena along a triple-phase line of fiber, a substrate and electrolyte containing nanoparticles. A variety of combinations of nanoparticles, such as Au and CdS nanoparticles, may be used to form a necklace. The I-V measurements on the system show both coulomb blockade and staircase, with high currents and high threshold voltage of 1-3 V. The present invention also provides methods for constructing such a device.

Fabrication of ultra long necklace of nanoparticles

Growing community of inventors

Manhattan, KS, United States of America

Vikas Berry