The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Sep. 28, 2022
Globalwafers Co., Ltd., Hsinchu, TW;
Carissima Marie Hudson, St. Charles, MO (US);
Jaewoo Ryu, Chesterfield, MO (US);
Michael Robbin Seacrist, Lake St. Louis, MO (US);
GlobalWafers Co., Ltd., Hsinchu, TW;
Abstract
Methods for producing single crystal silicon ingots are disclosed. The methods may involve modeling formation of thermal donors and target resistivity during downstream annealing processes such as during subsequent device manufacturing such as manufacturing of interposer devices. The model may output a pre-anneal wafer resistivity target range. The single crystal silicon ingot production process may be modeled to determine a counter-doping schedule to achieve the pre-anneal wafer resistivity target range across a longer length of the main body of the ingot.