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For the Inventor, By the Inventor

Chesterfield, MO, United States of America

JaeWoo Ryu

USPTO Granted Patents = 14 

Average Co-Inventor Count = 3.6

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:

goldMedal13 out of 302 
 
Globalwafers Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2020-2025

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14 patents (USPTO):Explore Patents
1. 12486594 - Ingot puller apparatus that axially position magnetic poles (2025-12-02),
2. 12486593 - Axial positioning of magnetic poles while producing a silicon ingot (2025-12-02),
3. 12351938 - Methods for producing a product ingot having low oxygen content (2025-07-08),
4. 12031229 - Ingot puller apparatus having heat shields with feet having an apex (2024-07-09),
5. 11932962 - Systems and methods for production of silicon using a horizontal magnetic field (2024-03-19),
6. 11873575 - Ingot puller apparatus having heat shields with voids therein (2024-01-16),
7. 11873574 - Systems and methods for production of silicon using a horizontal magnetic field (2024-01-16),
8. 11767611 - Methods for producing a monocrystalline ingot by horizontal magnetic field Czochralski (2023-09-26),
9. 11739437 - Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth (2023-08-29),
10. 11408090 - Methods for growing a single crystal silicon ingot using continuous Czochralski method (2022-08-09),
11. 11047066 - Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots (2021-06-29),
12. 10954606 - Methods for modeling the impurity concentration of a single crystal silicon ingot (2021-03-23),
13. 10793969 - Sample rod growth and resistivity measurement during single crystal silicon ingot production (2020-10-06),
14. 10781532 - Methods for determining the resistivity of a polycrystalline silicon melt (2020-09-22),

Title: JaeWoo Ryu: Innovator in Silicon Ingot Production

Introduction

JaeWoo Ryu is a prominent inventor based in Chesterfield, MO (US), known for his significant contributions to the field of silicon ingot production. With a total of 12 patents to his name, Ryu has developed innovative methods that enhance the quality and efficiency of silicon ingots.

Latest Patents

Among his latest patents, Ryu has introduced methods for producing a product ingot with low oxygen content. These methods involve evaluating various ingot puller apparatus to determine their capability in producing low oxygen content silicon product ingots. Additionally, he has patented an ingot puller apparatus designed for preparing a single crystal silicon ingot by the Czochralski method. This apparatus features a heat shield with a leg segment that includes a void, enhancing its efficiency in the production process.

Career Highlights

Ryu's career is marked by his dedication to advancing silicon production technologies. His innovative approaches have not only improved the quality of silicon ingots but have also contributed to the overall efficiency of the manufacturing process. His work is recognized within the industry, and he continues to push the boundaries of what is possible in silicon production.

Collaborations

Ryu has collaborated with notable colleagues, including Carissima Marie Hudson and Richard Joseph Phillips. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

JaeWoo Ryu's contributions to the field of silicon ingot production are invaluable. His innovative patents and collaborative efforts highlight his commitment to advancing technology in this critical area. Ryu's work continues to influence the industry and pave the way for future innovations.

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