The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Aug. 29, 2022
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventors:
Jaewoo Ryu, Chesterfield, MO (US);
Carissima Marie Hudson, Saint Charles, MO (US);
Junhwan Ji, Cheonan-si, KR;
Woojin Yoon, Cheonan-si, KR;
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 35/00 (2006.01); C30B 15/20 (2006.01); C30B 15/30 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 15/30 (2013.01); C30B 15/20 (2013.01); C30B 29/06 (2013.01);
Abstract
Methods for producing a silicon ingot in which a horizontal magnetic field is generated are disclosed. The magnet position is controlled in at least two stages of ingot growth. The magnetic poles may be at a first position during the first stage of ingot growth and lowered to a second position in a second stage of ingot growth. By controlling the magnet position, the crystal-melt interface shape may be relatively more consistent.