The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Jun. 27, 2018
Applicant:
Global Wafers Co., Ltd., Hsinchu, TW;
Inventors:
Carissima Marie Hudson, St. Charles, MO (US);
JaeWoo Ryu, Chesterfield, MO (US);
Assignee:
GlobalWafers CO., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/00 (2006.01); C30B 15/20 (2006.01); C30B 33/02 (2006.01); C30B 29/06 (2006.01); C30B 15/10 (2006.01);
U.S. Cl.
CPC ...
C30B 15/20 (2013.01); C30B 15/10 (2013.01); C30B 29/06 (2013.01); C30B 33/02 (2013.01);
Abstract
Methods for forming single crystal silicon ingots in which plural sample rods are grown from the melt are disclosed. A parameter related to the impurity concentration of the melt or ingot is measured. In some embodiments, the sample rods each have a diameter less than the diameter of the product ingot.