The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2022
Filed:
Apr. 14, 2020
Applicant:
Globalwafers Co., Ltd., Hsinshu, TW;
Inventors:
Carissima Marie Hudson, St. Charles, MO (US);
JaeWoo Ryu, Chesterfield, MO (US);
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/02 (2006.01); C30B 29/06 (2006.01); C30B 15/00 (2006.01); C30B 15/10 (2006.01); C30B 15/14 (2006.01); C30B 15/36 (2006.01);
U.S. Cl.
CPC ...
C30B 29/06 (2013.01); C30B 15/002 (2013.01); C30B 15/007 (2013.01); C30B 15/10 (2013.01); C30B 15/14 (2013.01); C30B 15/36 (2013.01);
Abstract
A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed, and the crucible location is fixed. The critical v/G is determined by the hot zone configuration, and the continuous replenishment of silicon to the melt during growth enables growth of the ingot at a constant pull rate consistent with the critical v/G during growth of a substantial portion of the main body of the ingot.