The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2024
Filed:
Apr. 05, 2022
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventors:
JaeWoo Ryu, Chesterfield, MO (US);
JunHwan Ji, Cheonan-Si, KR;
WooJin Yoon, Cheonan-Si, KR;
Richard J. Phillips, St. Peters, MO (US);
Carissima Marie Hudson, St. Charles, MO (US);
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/10 (2006.01); C30B 15/20 (2006.01); C30B 15/30 (2006.01); C30B 29/06 (2006.01); C30B 30/04 (2006.01);
U.S. Cl.
CPC ...
C30B 15/10 (2013.01); C30B 15/20 (2013.01); C30B 15/30 (2013.01); C30B 29/06 (2013.01); C30B 30/04 (2013.01);
Abstract
A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.