The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2023
Filed:
Dec. 11, 2019
Globalwafers Co., Ltd, Hsinchu, TW;
Carissima Marie Hudson, St. Charles, MO (US);
HyungMin Lee, Chungcheongnam-do, KR;
JaeWoo Ryu, Chesterfield, MO (US);
Richard J. Phillips, St. Peters, MO (US);
Robert Wendell Standley, Chesterfield, MO (US);
GlobalWafers Co., Ltd., Hsinchu, TW;
Abstract
Methods for forming single crystal silicon ingots with improved resistivity control are disclosed. The methods involve growth of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The sample rod is cropped to form a center slab. The resistivity of the center slab may be measured directly such as by a four-point probe. The sample rod or optionally the center slab may be annealed in a thermal donor kill cycle prior to measuring the resistivity, and the annealed rod or slab is irradiated with light in order to enhance the relaxation rate and enable more rapid resistivity measurement.