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For the Inventor, By the Inventor

Chesterfield, MO, United States of America

Robert Wendell Standley

USPTO Granted Patents = 20 

 

Average Co-Inventor Count = 3.1

ph-index = 5

Forward Citations = 165(Granted Patents)


Company Filing History:

goldMedal14 out of 302 
 
Globalwafers Co., Ltd.
 patents
silverMedal5 out of 347 
 
Memc Electronic Materials, Inc.
 patents
bronzeMedal1 out of 16 
 
Sunedison Semiconductor Limited
 patents

Years Active: 2000-2024

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20 patents (USPTO):Explore Patents
1. 12024789 - Methods for forming single crystal silicon ingots with improved resistivity control (2024-07-02),
2. 11942360 - Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability (2024-03-26),
3. 11887885 - Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability (2024-01-30),
4. 11739437 - Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth (2023-08-29),
5. 11626318 - Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability (2023-04-11),
6. 11532501 - Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability (2022-12-20),
7. 11075109 - Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability (2021-07-27),
8. 10943813 - Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability (2021-03-09),
9. 10920337 - Methods for forming single crystal silicon ingots with improved resistivity control (2021-02-16),
10. 10796945 - High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He—Nco-implantation (2020-10-06),
11. 10793969 - Sample rod growth and resistivity measurement during single crystal silicon ingot production (2020-10-06),
12. 10781532 - Methods for determining the resistivity of a polycrystalline silicon melt (2020-09-22),
13. 10403541 - High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He—Nco-implantation (2019-09-03),
14. 10224233 - [object Object] (2019-03-05),
15. 8846493 - Methods for producing silicon on insulator structures having high resistivity regions in the handle wafer (2014-09-30),

Title: The Inventor Robert Wendell Standley

Introduction: Robert Wendell Standley is a prolific inventor based in Chesterfield, Missouri. He is known for his groundbreaking contributions to various fields through his innovative creations.

Latest Patents: Robert Wendell Standley holds several patents in diverse areas, showcasing his versatility and creativity in inventing new solutions to existing problems.

Career Highlights: Throughout his career, Robert Wendell Standley has demonstrated a keen eye for identifying gaps in the market and developing unique inventions to address them. His passion for innovation has led to the successful commercialization of many of his creations.

Collaborations: Robert Wendell Standley has collaborated with leading companies and research institutions to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of many projects.

Conclusion: Robert Wendell Standley's dedication to innovation and his remarkable track record of creating impactful inventions make him a standout figure in the world of inventors. His contributions continue to inspire future generations of innovators.

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