The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2024
Filed:
Oct. 15, 2020
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventors:
Richard J. Phillips, St. Peters, MO (US);
Parthiv Daggolu, Creve Coeur, MO (US);
Eric Gitlin, St. Peters, MO (US);
Robert Standley, Chesterfield, MO (US);
HyungMin Lee, Chungcheongnam-do, KR;
Nan Zhang, O'Fallon, MO (US);
Jae-Woo Ryu, Chesterfield, MO (US);
Soubir Basak, Chandler, AZ (US);
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/20 (2006.01); C30B 15/04 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 15/20 (2013.01); C30B 15/04 (2013.01); C30B 29/06 (2013.01);
Abstract
Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity.