Growing community of inventors

Chesterfield, MO, United States of America

Robert Wendell Standley

Average Co-Inventor Count = 3.08

ph-index = 5

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 165

Robert Wendell StandleyJeffrey Louis Libbert (7 patents)Robert Wendell StandleyHariprasad Sreedharamurthy (6 patents)Robert Wendell StandleyMichael R Seacrist (6 patents)Robert Wendell StandleyLeif Jensen (6 patents)Robert Wendell StandleyRichard Joseph Phillips (5 patents)Robert Wendell StandleyHyungMin Lee (5 patents)Robert Wendell StandleyCarissima Marie Hudson (3 patents)Robert Wendell StandleyQingmin Liu (3 patents)Robert Wendell StandleyJaeWoo Ryu (3 patents)Robert Wendell StandleyCharles Chiun-Chieh Yang (3 patents)Robert Wendell StandleySoubir Basak (2 patents)Robert Wendell StandleyNan Zhang (2 patents)Robert Wendell StandleyJae-Woo Ryu (2 patents)Robert Wendell StandleyParthiv Daggolu (2 patents)Robert Wendell StandleyEric Michael Gitlin (2 patents)Robert Wendell StandleyYoungJung Lee (2 patents)Robert Wendell StandleyLu Fei (1 patent)Robert Wendell StandleyMichael John Ries (1 patent)Robert Wendell StandleyAnkur H Desai (1 patent)Robert Wendell StandleyDavid Louis Vadnais (1 patent)Robert Wendell StandleyJaewoo Ryu (0 patent)Robert Wendell StandleyYoungjung Lee (0 patent)Robert Wendell StandleyHyungmin Lee (0 patent)Robert Wendell StandleyLeif Jensen (0 patent)Robert Wendell StandleyJeffrrey L Libbert (0 patent)Robert Wendell StandleyRobert Wendell Standley (20 patents)Jeffrey Louis LibbertJeffrey Louis Libbert (53 patents)Hariprasad SreedharamurthyHariprasad Sreedharamurthy (22 patents)Michael R SeacristMichael R Seacrist (20 patents)Leif JensenLeif Jensen (7 patents)Richard Joseph PhillipsRichard Joseph Phillips (37 patents)HyungMin LeeHyungMin Lee (11 patents)Carissima Marie HudsonCarissima Marie Hudson (29 patents)Qingmin LiuQingmin Liu (21 patents)JaeWoo RyuJaeWoo Ryu (14 patents)Charles Chiun-Chieh YangCharles Chiun-Chieh Yang (6 patents)Soubir BasakSoubir Basak (17 patents)Nan ZhangNan Zhang (11 patents)Jae-Woo RyuJae-Woo Ryu (10 patents)Parthiv DaggoluParthiv Daggolu (10 patents)Eric Michael GitlinEric Michael Gitlin (4 patents)YoungJung LeeYoungJung Lee (3 patents)Lu FeiLu Fei (12 patents)Michael John RiesMichael John Ries (9 patents)Ankur H DesaiAnkur H Desai (3 patents)David Louis VadnaisDavid Louis Vadnais (3 patents)Jaewoo RyuJaewoo Ryu (0 patent)Youngjung LeeYoungjung Lee (0 patent)Hyungmin LeeHyungmin Lee (0 patent)Leif JensenLeif Jensen (0 patent)Jeffrrey L LibbertJeffrrey L Libbert (0 patent)
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Inventor’s number of patents
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Strength of working relationships

Company Filing History:

1. Globalwafers Co., Ltd. (14 from 302 patents)

2. Memc Electronic Materials, Inc. (5 from 347 patents)

3. Sunedison Semiconductor Limited (1 from 16 patents)


20 patents:

1. 12024789 - Methods for forming single crystal silicon ingots with improved resistivity control

2. 11942360 - Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability

3. 11887885 - Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability

4. 11739437 - Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth

5. 11626318 - Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability

6. 11532501 - Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability

7. 11075109 - Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability

8. 10943813 - Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability

9. 10920337 - Methods for forming single crystal silicon ingots with improved resistivity control

10. 10796945 - High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He—Nco-implantation

11. 10793969 - Sample rod growth and resistivity measurement during single crystal silicon ingot production

12. 10781532 - Methods for determining the resistivity of a polycrystalline silicon melt

13. 10403541 - High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He—Nco-implantation

14. 10224233 - [object Object]

15. 8846493 - Methods for producing silicon on insulator structures having high resistivity regions in the handle wafer

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12/7/2025
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