Average Co-Inventor Count = 3.08
ph-index = 5
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. Globalwafers Co., Ltd. (14 from 302 patents)
2. Memc Electronic Materials, Inc. (5 from 347 patents)
3. Sunedison Semiconductor Limited (1 from 16 patents)
20 patents:
1. 12024789 - Methods for forming single crystal silicon ingots with improved resistivity control
2. 11942360 - Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability
3. 11887885 - Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
4. 11739437 - Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth
5. 11626318 - Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability
6. 11532501 - Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
7. 11075109 - Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability
8. 10943813 - Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
9. 10920337 - Methods for forming single crystal silicon ingots with improved resistivity control
10. 10796945 - High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He—Nco-implantation
11. 10793969 - Sample rod growth and resistivity measurement during single crystal silicon ingot production
12. 10781532 - Methods for determining the resistivity of a polycrystalline silicon melt
13. 10403541 - High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He—Nco-implantation
14. 10224233 - [object Object]
15. 8846493 - Methods for producing silicon on insulator structures having high resistivity regions in the handle wafer