The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2023
Filed:
Apr. 19, 2021
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventors:
Michael R. Seacrist, Lake St. Louis, MO (US);
Robert W. Standley, Chesterfield, MO (US);
Jeffrey L. Libbert, O'Fallon, MO (US);
Hariprasad Sreedharamurthy, Ballwin, MO (US);
Leif Jensen, Frederikssund, DK;
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); C30B 29/06 (2006.01); H01L 21/322 (2006.01); H01L 23/66 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76243 (2013.01); C30B 29/06 (2013.01); H01L 21/3226 (2013.01); H01L 21/76251 (2013.01); H01L 23/66 (2013.01); H01L 27/1203 (2013.01); H01L 29/0649 (2013.01);
Abstract
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
Seacrist, Michael. (2023). Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability (U.S. Patent No. 11626318). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11626318
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile