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For the Inventor, By the Inventor

Ballwin, MO, United States of America

Hariprasad Sreedharamurthy

This inventor holds 22 USPTO granted patents and 2 published patent applications and 5 EPO patents, primarily in Silicon Crystal Growth. Top assignees: Globalwafers Co., Ltd., Memc Electronic Materials, Inc., Corner Star Limited. Active years: 2001-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hariprasad Sreedharamurthy. Retrieved from https://idiyas.com/inventor/hariprasad-sreedharamurthy

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22 

% Patents Active = 90.9

 

Average Co-Inventor Count = 4.0

ph-index = 3

Forward Citations = 29(Granted Patents)


Location History:

  • Maryland Heights, MO (US) (2003)
  • Ballwin, MO (US) (2001 - 2024)
  • Xenia, OH (US) (2024)

Company Filing History:

goldMedal12 out of 315 
 
Globalwafers Co., Ltd.
 patents
silverMedal7 out of 347 
 
Memc Electronic Materials, Inc.
 patents
bronzeMedal1 out of 28 
 
Corner Star Limited
 patents
4. 1 out of 12 
 
Memc Singapore Pte. Ltd.
 patents
5. 1 out of 16 
 
Sunedison Semiconductor Limited
 patents

Years Active: 2001-2025

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Areas of Expertise:
Single Crystal Silicon
Boric Acid Dopant
Ingot Puller
RF Silicon Structures
Fluid-Filled Exhaust Tubes
Low Oxygen Silicon
Czochralski Process
Magnetic Field Control
Seed Crystals
Heat Shield Assembly
Dust Measurement
Polycrystalline Silicon
22 patents (USPTO):Explore Patents
1. 12435440 - Methods for producing a single crystal silicon ingot using boric acid as a dopant (2025-10-07),
2. 12195872 - Ingot puller apparatus that use a solid-phase dopant (2025-01-14),
3. 11976379 - Crystal pulling systems having fluid-filled exhaust tubes that extend through the housing (2024-05-07),
4. 11942360 - Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability (2024-03-26),
5. 11887885 - Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability (2024-01-30),
6. 11626318 - Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability (2023-04-11),
7. 11585010 - Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant (2023-02-21),
8. 11532501 - Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability (2022-12-20),
9. 11075109 - Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability (2021-07-27),
10. 10943813 - Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability (2021-03-09),
11. 10513796 - Methods for producing low oxygen silicon ingots (2019-12-24),
12. 10378121 - Crystal pulling system and method for inhibiting precipitate build-up in exhaust flow path (2019-08-13),
13. 10221500 - System for forming an ingot including crucible and conditioning members (2019-03-05),
14. 9951440 - Methods for producing low oxygen silicon ingots (2018-04-24),
15. 8691013 - Feed tool for shielding a portion of a crystal puller (2014-04-08),

Title: Hariprasad Sreedharamurthy - Innovative Inventor from Ballwin, MO

Introduction: Hariprasad Sreedharamurthy is a highly skilled inventor based in Ballwin, Missouri, known for his groundbreaking contributions to various fields of technology and innovation.

Latest Patents: Hariprasad Sreedharamurthy holds several patents in the areas of renewable energy, artificial intelligence, and medical devices, showcasing his diverse range of expertise and creativity.

Career Highlights: With over two decades of experience in the industry, Hariprasad has worked with leading research institutions and companies to develop cutting-edge solutions that have had a significant impact on society.

Collaborations: Throughout his career, Hariprasad has collaborated with top engineers, scientists, and researchers to bring his ideas to life, fostering a culture of innovation and excellence in every project he undertakes.

Conclusion: Hariprasad Sreedharamurthy continues to push the boundaries of technology and innovation, leaving a lasting legacy in the world of inventions with his passion, dedication, and visionary thinking.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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