Globalwafers Co., Ltd.

Memc Electronic Materials, Inc.

Corner Star Limited

Sunedison Semiconductor Limited

Memc Singapore Pte. Ltd.

Hariprasad Sreedharamurthy

Jeffrey Louis Libbert

Robert Wendell Standley

Michael R Seacrist

Leif Jensen

Stephan Haringer

Richard Joseph Phillips

John D Holder

William L Luter

Carissima Marie Hudson

Harold W Korb

Nan Zhang

Steven Lawrence Kimbel

Gaurab Samanta

Soubir Basak

Milind S Kulkarni

Richard G Schrenker

HyungMin Lee

Jae-Woo Ryu

Yu-Chiao Wu

Marco Zardoni

Kirk D McCallum

Joseph C Holzer

Mohsen Banan

Lee William Ferry

Benjamin Michael Meyer

Salvador Zepeda

Mauro Diodà

Marco D'Angella

John David Hilker

Christopher Vaughn Luers

Steven M Joslin

John Lhamon

Yu-Chaio Wu

Jeffrrey L Libbert

Methods for producing a single crystal silicon ingot are disclosed. The ingot is doped with boron using solid-phase boric acid as the source of boron. Boric acid may be used to counter-dope the ingot during ingot growth. Ingot puller apparatus that use a solid-phase dopant are also disclosed. The solid-phase dopant may be disposed in a receptacle that is moved closer to the surface of the melt or a vaporization unit may be used to produce a dopant gas from the solid-phase dopant.

Methods for producing a single crystal silicon ingot using boric acid as a dopant

Ingot puller apparatus that use a solid-phase dopant

Crystal pulling systems having a fluid-cooled exhaust tube are disclosed. The fluid-cooled exhaust tube extends through the reactor housing and into the reaction chamber. In some embodiments, the exhaust tube extends through the bottom of the crystal puller housing and through a bottom heat shield within the ingot puller housing.

Crystal pulling systems having fluid-filled exhaust tubes that extend through the housing

A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.

Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability

Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability

Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant

An method for producing a silicon ingot includes melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt, generating a cusped magnetic field within the vacuum chamber, dipping a seed crystal into the melt, withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm), and simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma). The plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt.

Methods for producing low oxygen silicon ingots

A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a housing defining a growth chamber, a crucible disposed within the growth chamber containing the melt of semiconductor or solar-grade material, a vacuum pump for drawing exhaust gases out of the growth chamber, and a fluid-cooled exhaust tube connected between the growth chamber and the vacuum pump.

Crystal pulling system and method for inhibiting precipitate build-up in exhaust flow path

Systems and methods for forming an ingot from a melt are disclosed. A system includes a crucible defining a cavity for receiving the melt, and a first and second barrier to inhibit movement of the melt. A first passageway and a second passageway are arranged to allow the melt located within an outer zone to move into and through a transition zone and into an inner zone. Conditioning members are placed in at least one of the zones and arranged to contact the melt to reduce the number of micro-voids in the melt.

System for forming an ingot including crucible and conditioning members

A crystal puller for melting silicon and forming a single crystal ingot and a feed tool for shielding a portion of the crystal puller during charging of the crystal puller are disclosed herein. The crystal puller includes a crucible for containing molten silicon. The feed tool includes a cylinder and a plate. The cylinder has an inner surface and an annular ledge formed in a portion of the inner surface. The cylinder has a diameter at the annular ledge that is less than a diameter of the cylinder at the inner surface. The plate is positioned on the annular ledge and includes a first section separate from a second section. The first section and the second section are operable to move laterally with respect to each other. The plate has a central opening formed in at least one of the first section and the second section.

Feed tool for shielding a portion of a crystal puller

Growing community of inventors

Ballwin, MO, United States of America

Hariprasad Sreedharamurthy