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For the Inventor, By the Inventor

Saint Peters, MO, United States of America

Memc Electronic Materials, Inc.


USPTO Granted Patents = 347

% Expired Patents = 10.4


Trademarks = 6

Forward Citations = 3,740

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303 inventors (with patents filed for the assignee):

goldMedal Robert J Falster (63 out of 80 patents)

silverMedal John D Holder (26 out of 29 patents)

bronzeMedal Joseph C Holzer (23 out of 24 patents)

4.  Harold W Korb (22 out of 25 patents)

5.  Henry Frank Erk (20 out of 30 patents)

6.  Mohsen Banan (19 out of 19 patents)

7.  Paolo Mutti (17 out of 17 patents)

8.  Puneet Gupta (16 out of 41 patents)

9.  Roland R Vandamme (15 out of 19 patents)

10.  Larry W Shive (15 out of 16 patents)

11.  Steven Lawrence Kimbel (14 out of 27 patents)

12.  Massimiliano Olmo (14 out of 15 patents)

13.  Bayard K Johnson (13 out of 16 patents)

14.  Marco Cornara (12 out of 13 patents)

15.  Daniela Gambaro (12 out of 13 patents)


Core Competencies:
Silicon Processing
Wafer Grinding
Dopant Feeding
Silane Purification
Polycrystalline Silicon
Semiconductor Wafers
Temperature Monitoring
Epitaxial Growth
Nanotopology Control
Crucible Production
Edge Etching
Flatness Defects

347 patents:

1. 10023973 - Dopant feeding device for dispensing dopant (2018-07-17),
2. 9644902 - Methods for reacting compounds (2017-05-09),
3. 9359691 - Method of loading a charge of polysilicon into a crucible (2016-06-07),
4. 9222733 - Reactor apparatus and methods for reacting compounds (2015-12-29),
5. 9115423 - Methods and systems for monitoring and controlling silicon rod temperature (2015-08-25),
6. 8735261 - Method and system for stripping the edge of a semiconductor wafer (2014-05-27),
7. 8728574 - Methods for introducing a first gas and a second gas into a reaction chamber (2014-05-20),
8. 8715597 - Production of polycrystalline silicon in substantially closed-loop systems that involve disproportionation operations (2014-05-06),
9. 8712575 - Hydrostatic pad pressure modulation in a simultaneous double side wafer grinder (2014-04-29),
10. 8696811 - Method for feeding arsenic dopant into a silicon crystal growing apparatus (2014-04-15),
11. 8691055 - Processes for the purification of trichlorosilane or silicon tetrachloride (2014-04-08),
12. 8691008 - Systems for weighing a pulled object (2014-04-08),
13. 8673248 - Silicon material with controlled agglomerated point defects and oxygen clusters induced by the lateral surface (2014-03-18),
14. 8551298 - Processes for purifying silane (2013-10-08),
15. 8551247 - Generating a pumping force in a silicon melt by applying a time-varying magnetic field (2013-10-08),
Memc Electronic Materials, Inc., headquartered in Saint Peters, Missouri, specializes in silicon processing technologies essential for the semiconductor industry. The company focuses on the development and manufacturing of high-quality silicon wafers and related materials, including polycrystalline silicon and epitaxial growth processes. With expertise in wafer grinding, dopant feeding, and silane purification, Memc plays a critical role in advancing semiconductor fabrication and enhancing the performance of electronic devices.
Profile summary based on public USPTO records.

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USPTO Data Jan 1 1976 - Sep 29 2026

Memc Electronic Materials, Inc.
347 Patents

#1 in Saint Peters, MO

#16 in Missouri

#1,302 in US

#2,621 in the World

Saint Peters, MO (US)
Saint Peters, MO, United States of America

Memc Electronic Materials, Inc.

Forward Citations = 3,740

303 inventors:

goldMedal Robert J Falster (63 out of 80 patents)

silverMedal John D Holder (26 out of 29 patents)

bronzeMedal Joseph C Holzer (23 out of 24 patents)

4.  Harold W Korb (22 out of 25 patents)

5.  Henry Frank Erk (20 out of 30 patents)

Please report any incorrect information to [email protected]
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