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For the Inventor, By the Inventor

Jefferson Hills, PA, United States of America

Bayard K Johnson

This inventor holds 16 USPTO granted patents and 1 published patent application and 4 EPO patents, primarily in Silicon Crystal Growth. Top assignees: Memc Electronic Materials, Inc., Gtat IP Holding LLC.. Active years: 1999-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bayard K Johnson. Retrieved from https://idiyas.com/inventor/bayard-k-johnson

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 16 

% Patents Active = 87.5

 

Average Co-Inventor Count = 4.0

ph-index = 7

Forward Citations = 109(Granted Patents)


Location History:

  • Lake St. Louis, MO (US) (2000 - 2002)
  • St. Louis, MO (US) (1999 - 2005)
  • Jefferson Hills, PA (US) (2003 - 2020)

Company Filing History:

goldMedal13 out of 347 
 
Memc Electronic Materials, Inc.
 patents
silverMedal3 out of 5 
 
Gtat IP Holding LLC.
 patents

Years Active: 1999-2020

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Areas of Expertise:
Silicon Ingot
Doping
Low Defect Density
Oxygen Precipitating
Epitaxial Wafer
Gallium
Indium
Aluminum
Continuous Oxidation
Defect-Free Silicon
Self-Interstitial
Vacancy Dominated
16 patents (USPTO):Explore Patents
1. 10544517 - Growth of a uniformly doped silicon ingot by doping only the initial charge (2020-01-28),
2. 10202705 - Silicon ingot having uniform multiple dopants and method and apparatus for producing same (2019-02-12),
3. 9051659 - Silicon single crystal doped with gallium, indium, or aluminum (2015-06-09),
4. 7442253 - Process for forming low defect density, ideal oxygen precipitating silicon (2008-10-28),
5. 7229693 - Low defect density, ideal oxygen precipitating silicon (2007-06-12),
6. 6896728 - Process for producing low defect density, ideal oxygen precipitating silicon (2005-05-24),
7. 6840997 - Vacancy, dominsated, defect-free silicon (2005-01-11),
8. 6632278 - Low defect density epitaxial wafer and a process for the preparation thereof (2003-10-14),
9. 6555194 - Process for producing low defect density, ideal oxygen precipitating silicon (2003-04-29),
10. 6409826 - Low defect density, self-interstitial dominated silicon (2002-06-25),
11. 6379642 - Vacancy dominated, defect-free silicon (2002-04-30),
12. 6315828 - Continuous oxidation process for crystal pulling apparatus (2001-11-13),
13. 6254672 - Low defect density self-interstitial dominated silicon (2001-07-03),
14. 6190631 - Low defect density, ideal oxygen precipitating silicon (2001-02-20),
15. 6039801 - Continuous oxidation process for crystal pulling apparatus (2000-03-21),

Title: Bayard K Johnson: Innovator in Silicon Ingot Growth

Introduction

Bayard K Johnson is a prominent inventor known for his significant contributions to the field of silicon ingot growth. Residing in Jefferson Hills, PA, he holds a total of 16 patents that showcase his innovative approaches to semiconductor manufacturing. His work has had a profound impact on the efficiency and quality of silicon ingots used in various applications.

Latest Patents

Among his latest patents, Johnson has developed a method for the growth of a uniformly doped silicon ingot by doping only the initial charge. This invention relates to a method of growing a silicon ingot comprising a dopant material with a specific segregation coefficient. The process ensures that the concentration of the dopant remains axially uniform throughout the ingot. Additionally, he has patented a crystalline growth system for producing silicon ingots with uniform multiple dopants. This system utilizes a Czochralski growth method, which allows for the delivery of controllable amounts of silicon and dopant materials, resulting in ingots with consistent dopant concentrations along their axes.

Career Highlights

Throughout his career, Johnson has worked with notable companies in the semiconductor industry, including MEMC Electronic Materials, Inc. and GTAT IP Holding LLC. His expertise in silicon growth technologies has positioned him as a leader in the field, contributing to advancements that enhance the performance of electronic devices.

Collaborations

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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