The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
Mar. 16, 1999
Applicant:
Inventors:
Robert A. Falster, Milan, IT;
Joseph C. Holzer, St. Charles, MO (US);
Steve A. Markgraf, Chandler, AZ (US);
Paolo Mutti, Merano, IT;
Seamus A. McQuaid, Vitoria, ES;
Bayard K. Johnson, Lake St. Louis, MO (US);
Assignee:
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 3/302 ; C30B 1/502 ;
U.S. Cl.
CPC ...
C30B 3/302 ; C30B 1/502 ;
Abstract
The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region in which vacancies are the predominant intrinsic point defect and which is substantially free of agglomerated vacancy intrinsic point defects, wherein the first axially symmetric region has a width which is at least about 50% of the length of the radius of the ingot, and a process for the preparation thereof.