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For the Inventor, By the Inventor

Milan, Italy

Paolo Mutti

USPTO Granted Patents = 17

Average Co-Inventor Count = 4.8

ph-index = 6

Forward Citations = 103(Granted Patents)


Location History:

  • Merano, IT (1999 - 2005)
  • Milan, IT (2002 - 2008)

Company Filing History:

goldMedal17 out of 347 
 
Memc Electronic Materials, Inc.
 patents

Years Active: 1999-2008

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17 patents (USPTO):Explore Patents
1. 7442253 - Process for forming low defect density, ideal oxygen precipitating silicon (2008-10-28),
2. 7431765 - Process for preparing single crystal silicon having improved gate oxide integrity (2008-10-07),
3. 7229693 - Low defect density, ideal oxygen precipitating silicon (2007-06-12),
4. 6986925 - Single crystal silicon having improved gate oxide integrity (2006-01-17),
5. 6896728 - Process for producing low defect density, ideal oxygen precipitating silicon (2005-05-24),
6. 6840997 - Vacancy, dominsated, defect-free silicon (2005-01-11),
7. 6726764 - Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations (2004-04-27),
8. 6652646 - Process for growing a silicon crystal segment substantially free from agglomerated intrinsic point defects which allows for variability in the process conditions (2003-11-25),
9. 6632278 - Low defect density epitaxial wafer and a process for the preparation thereof (2003-10-14),
10. 6555194 - Process for producing low defect density, ideal oxygen precipitating silicon (2003-04-29),
11. 6500255 - Process for growing silicon crystals which allows for variability in the process conditions while suppressing the formation of agglomerated intrinsic point defects (2002-12-31),
12. 6409826 - Low defect density, self-interstitial dominated silicon (2002-06-25),
13. 6379642 - Vacancy dominated, defect-free silicon (2002-04-30),
14. 6312516 - Process for preparing defect free silicon crystals which allows for variability in process conditions (2001-11-06),
15. 6254672 - Low defect density self-interstitial dominated silicon (2001-07-03),

Title: The Innovative Contributions of Paolo Mutti

Introduction

Paolo Mutti is a prominent inventor based in Milan, Italy, known for his significant contributions to the field of silicon wafer technology. With a total of 17 patents to his name, he has made remarkable advancements that have impacted electronic device manufacturing processes.

Latest Patents

Among his latest patents is a process for forming low defect density, ideal oxygen precipitating silicon. This invention focuses on producing a silicon wafer that can form an ideal, non-uniform depth distribution of oxygen precipitates during heat treatment cycles. The process involves exposing the wafer's front and back surfaces to different atmospheres or thermally annealing two wafers in a face-to-face arrangement. Another notable patent is for preparing single crystal silicon with improved gate oxide integrity. This process produces a single crystal silicon wafer characterized by a specific structure that minimizes intrinsic point defects, ensuring better performance in electronic applications.

Career Highlights

Paolo Mutti has built a successful career at Memc Electronic Materials, Inc., where he has been instrumental in developing innovative silicon wafer technologies. His work has not only advanced the field but has also contributed to the efficiency and effectiveness of electronic devices.

Collaborations

Throughout his career, Paolo has collaborated with notable colleagues such as Joseph C Holzer and Steve A Markgraf. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Paolo Mutti's contributions to silicon wafer technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence the future of electronic device manufacturing.

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