The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2003
Filed:
Apr. 30, 2002
Applicant:
Inventors:
Robert A. Falster, London, GB;
Joseph C. Holzer, St. Charles, MO (US);
Steve A. Markgraf, Chandler, AZ (US);
Paolo Mutti, Milan, IT;
Seamus A. McQuaid, Victoria, ES;
Bayard K. Johnson, Jefferson Hills, PA (US);
Assignee:
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 2/906 ; C30B 2/500 ;
U.S. Cl.
CPC ...
C30B 2/906 ; C30B 2/500 ;
Abstract
The present invention relates to an epitaxial wafer comprising single crystal silicon substrate and an epitaxial layer deposited thereon. The substrate comprises an axially symmetric region which is free of agglomerated intrinsic point defects and wherein silicon self-interstitials are the predominant intrinsic point defect in the axially symmetric region. The present invention further relates to a process for producing such an epitaxial wafer.