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For the Inventor, By the Inventor

Vitoria-Gasteiz, Spain

Seamus A McQuaid

This inventor holds 11 USPTO granted patents and 1 EPO patent. Top assignee: Memc Electronic Materials, Inc.. Active years: 1999-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seamus A McQuaid. Retrieved from https://idiyas.com/inventor/seamus-a-mcquaid

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 11

% Patents Active = 81.8


Average Co-Inventor Count = 7.1

ph-index = 6

Forward Citations = 88(Granted Patents)


Location History:

  • Victoria, ES (2003)
  • St. Louis, MO (US) (1999 - 2005)
  • Vitoria, ES (2002 - 2008)

Company Filing History:

goldMedal11 out of 347 
 
Memc Electronic Materials, Inc.
 patents

Years Active: 1999-2008

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11 patents (USPTO):Explore Patents
1. 7442253 - Process for forming low defect density, ideal oxygen precipitating silicon (2008-10-28),
2. 7229693 - Low defect density, ideal oxygen precipitating silicon (2007-06-12),
3. 6896728 - Process for producing low defect density, ideal oxygen precipitating silicon (2005-05-24),
4. 6840997 - Vacancy, dominsated, defect-free silicon (2005-01-11),
5. 6632278 - Low defect density epitaxial wafer and a process for the preparation thereof (2003-10-14),
6. 6555194 - Process for producing low defect density, ideal oxygen precipitating silicon (2003-04-29),
7. 6409826 - Low defect density, self-interstitial dominated silicon (2002-06-25),
8. 6379642 - Vacancy dominated, defect-free silicon (2002-04-30),
9. 6254672 - Low defect density self-interstitial dominated silicon (2001-07-03),
10. 6190631 - Low defect density, ideal oxygen precipitating silicon (2001-02-20),
11. 5919302 - Low defect density vacancy dominated silicon (1999-07-06),

Title: Seamus A McQuaid: Innovator in Silicon Wafer Technology

Introduction

Seamus A McQuaid is a prominent inventor based in Vitoria, ES, known for his significant contributions to the field of silicon wafer technology. With a total of 11 patents to his name, McQuaid has made remarkable advancements that have impacted electronic device manufacturing processes.

Latest Patents

One of McQuaid's latest patents is a process for forming low defect density, ideal oxygen precipitating silicon. This invention is directed towards producing a silicon wafer that can form an ideal, non-uniform depth distribution of oxygen precipitates during the heat treatment cycles of various electronic device manufacturing processes. Additionally, it may contain an axially symmetric region that is substantially free of agglomerated intrinsic point defects. Another notable patent focuses on the silicon wafer itself, which shares similar characteristics and benefits during manufacturing.

Career Highlights

Seamus A McQuaid is currently associated with Memc Electronic Materials, Inc., where he continues to innovate and develop new technologies in silicon wafer production. His work has been instrumental in enhancing the quality and efficiency of silicon wafers used in electronic devices.

Collaborations

Throughout his career, McQuaid has collaborated with notable colleagues such as Joseph C Holzer and Steve A Markgraf, contributing to a dynamic and innovative work environment.

Conclusion

Seamus A McQuaid's contributions to silicon wafer technology have established him as a key figure in the field. His innovative patents and collaborations continue to influence the future of electronic device manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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