The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2007
Filed:
Feb. 16, 2005
Robert J. Falster, London, GB;
Joseph C. Holzer, St. Charles, MO (US);
Marco Cornara, Galliate, IT;
Daniela Gambaro, Galliate, IT;
Massimiliano Olmo, Novara, IT;
Steve A. Markgraf, Maple Grove, MN (US);
Paolo Mutti, Milan, IT;
Seamus A. Mcquaid, Vitoria, ES;
Bayard K. Johnson, Jefferson Hills, PA (US);
Robert J. Falster, London, GB;
Joseph C. Holzer, St. Charles, MO (US);
Marco Cornara, Galliate, IT;
Daniela Gambaro, Galliate, IT;
Massimiliano Olmo, Novara, IT;
Steve A. Markgraf, Maple Grove, MN (US);
Paolo Mutti, Milan, IT;
Seamus A. McQuaid, Vitoria, ES;
Bayard K. Johnson, Jefferson Hills, PA (US);
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Abstract
The present invention is directed to a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and may additionally contain an axially symmetric region which is substantially free of agglomerated intrinsic point defects.