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For the Inventor, By the Inventor

London, United Kingdom

Robert J Falster

USPTO Granted Patents = 80 


Average Co-Inventor Count = 2.2

ph-index = 15

Forward Citations = 633(Granted Patents)


Inventors with similar research interests:


Location History:

  • Oxford OX1 3PH, GB (1993)
  • Milan, IT (1993 - 2005)
  • Woodstock, GB (2019 - 2020)
  • London, GB (2001 - 2023)

Company Filing History:

goldMedal63 out of 347 
 
Memc Electronic Materials, Inc.
 patents
silverMedal8 out of 302 
 
Globalwafers Co., Ltd.
 patents
bronzeMedal4 out of 38 
 
Sunedison Semiconductor Limited (uen201334164h)
 patents
4. 1 out of 1 
 
Sunedison Semiconductor Ltd. (uen201334164h)
 patent
5. 1 out of 37 
 
Sunedison, Inc.
 patents
6. 1 out of 16 
 
Sunedison Semiconductor Limited
 patents
7. 1 out of 8 
 
Memc Singapore Pte. Ltd. (uen200614794d)
 patents
8. 1 out of 832,680 
Other
 patents

Years Active: 1993-2023

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80 patents (USPTO):Explore Patents
1. 11764071 - Apparatus for stressing semiconductor substrates (2023-09-19),
2. 11655560 - High resistivity single crystal silicon ingot and wafer having improved mechanical strength (2023-05-23),
3. 11655559 - High resistivity single crystal silicon ingot and wafer having improved mechanical strength (2023-05-23),
4. 11282715 - Apparatus for stressing semiconductor substrates (2022-03-22),
5. 11276583 - Apparatus for stressing semiconductor substrates (2022-03-15),
6. 11276582 - Apparatus for stressing semiconductor substrates (2022-03-15),
7. 11142844 - High resistivity single crystal silicon ingot and wafer having improved mechanical strength (2021-10-12),
8. 10707093 - Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield (2020-07-07),
9. 10453703 - Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield (2019-10-22),
10. 10361097 - Apparatus for stressing semiconductor substrates (2019-07-23),
11. 9634098 - Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the Czochralski method (2017-04-25),
12. 9583364 - Processes and apparatus for preparing heterostructures with reduced strain by radial compression (2017-02-28),
13. 9583363 - Processes and apparatus for preparing heterostructures with reduced strain by radial distension (2017-02-28),
14. 9142616 - Silicon wafers with suppressed minority carrier lifetime degradation (2015-09-22),
15. 9129919 - Production of high precipitate density wafers by activation of inactive oxygen precipitate nuclei (2015-09-08),

Title: Robert J Falster - Pioneering Inventor from London, GB

Introduction: Robert J Falster is a distinguished inventor based in London, GB, known for his groundbreaking contributions to various fields through his innovative creations.

Latest Patents: Robert J Falster holds several patents in the areas of renewable energy technologies, sustainable materials, and advanced robotics, showcasing his commitment to driving progress through invention.

Career Highlights: With a career spanning over two decades, Robert J Falster has established himself as a visionary inventor with a keen focus on developing solutions that address pressing global challenges. His work has been recognized for its ingenuity and practicality.

Collaborations: Throughout his career, Robert J Falster has collaborated with leading research institutions, universities, and companies to bring his inventions to life. His partnerships have been instrumental in advancing his ideas from concept to reality.

Conclusion: Robert J Falster's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a trailblazing inventor in London, GB, and beyond. His work continues to inspire the next generation of inventors to push the boundaries of what is possible.

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