The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Jan. 14, 2015
Applicant:
Sunedison Inc., Maryland Heights, MO (US);
Inventors:
Robert J. Falster, London, GB;
Vladimir Voronkov, Merano, IT;
Assignee:
SunEdison, Inc., Maryland Heights, MO (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/324 (2006.01); H01L 29/16 (2006.01); H01L 21/322 (2006.01);
U.S. Cl.
CPC ...
H01L 29/16 (2013.01); H01L 21/3221 (2013.01);
Abstract
Processes for suppressing minority carrier lifetime degradation in silicon wafers are disclosed. The processes involve quench cooling the wafers to increase the density of nano-precipitates in the silicon wafers and the rate at which interstitial atoms are consumed by the nano-precipitates.
Falster, Robert. (2015). Silicon wafers with suppressed minority carrier lifetime degradation (U.S. Patent No. 9142616). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9142616
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile