logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9129919 B1

PDFFull Text
Date of Patent:
Sep. 08, 2015

Filed:

Nov. 19, 2013

Production of high precipitate density wafers by activation of inactive oxygen precipitate nuclei

Applicant:

Sunedison Semiconductor Limited, St. Peters, MO (US);

Inventors:

Robert J. Falster, London, GB;

Vladimir V. Voronkov, Merano, IT;

Marco Cornara, Galliate, IT;

Daniela Gambaro, Galliate, IT;

Massimiliano Olmo, Novara, IT;

Assignee:

SunEdison Semiconductor Limited, Singapore, SG;

Attorney:

Armstrong Teasdale LLP

Primary Examiner:

Kimberly Rizkallah

Assistant Examiner:

Maria Ligai

Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 21/324 (2006.01); H01L 21/66 (2006.01); C30B 29/06 (2006.01); C30B 33/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/324 (2013.01); C30B 29/06 (2013.01); C30B 33/02 (2013.01); H01L 22/12 (2013.01);
Abstract

Processes for the treatment of silicon wafers to form a high density non-uniform distribution of oxygen precipitate nuclei therein such that, upon being subjected to the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, the wafers form oxygen precipitates in the bulk and a precipitate-free zone near the surface are disclosed. The processes involve activation of inactive oxygen precipitate nuclei by performing heat treatments between about 400° C. and about 600° C. for at least about 1 hour.

Find Patent Forward Citations

Quick Actions:

Falster, Robert. (2015). Production of high precipitate density wafers by activation of inactive oxygen precipitate nuclei (U.S. Patent No. 9129919). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9129919

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…