The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Dec. 27, 2013
Applicant:
Sunedison Semiconductor Limited (Uen201334164h), St. Peters, MO (US);
Inventors:
Robert J. Falster, London, GB;
Vladimir V. Voronkov, Merano, IT;
John A. Pitney, O'Fallon, MO (US);
Peter D. Albrecht, O'Fallon, MO (US);
Assignee:
SunEdison Semiconductor Limited (UEN201334164H), St. Peters, MO (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 21/302 (2006.01); H01L 21/687 (2006.01); C30B 25/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/322 (2013.01); C30B 25/12 (2013.01); H01L 21/302 (2013.01); H01L 21/6875 (2013.01); H01L 21/68735 (2013.01);
Abstract
Apparatus and processes for preparing heterostructures with reduced strain are disclosed. The heterostructures may include a semiconductor structure that conforms to a surface layer having a different crystal lattice constant than the structure to form a relatively low-defect heterostructure.