The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Jun. 11, 2013
Applicant:
Memc Electronic Materials S.p.a., Novara, IT;
Inventors:
Robert J. Falster, London, GB;
Vladimir V. Voronkov, Merano, IT;
Assignee:
SunEdison Semiconductor Ltd. (UEN201334164H), Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 29/36 (2006.01); H01L 21/223 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/36 (2013.01); H01L 21/02694 (2013.01); H01L 21/223 (2013.01); H01L 21/3225 (2013.01);
Abstract
A method for controlling oxygen precipitation in a single crystal silicon wafer having a wafer resistivity of less than about 10 milliohm-cm is provided so that the wafer has uniformly high oxygen precipitation behavior from the central axis to the circumferential edge. The single crystal silicon wafer comprises an additional dopant selected from among carbon, arsenic, and antimony.